txt电子书免费下载《功率半导体器件基础-英文版[按需印刷]》的作者巴利伽和科学出版社为本书的写作出版都付出很多汗水
书籍 通信书籍 《功率半导体器件基础(英文版)》结合作者多年的实践经验，深入讨论了半导体功率器件的物理模型、工作原理、设计原则和应用特性，不仅详细介绍了硅基器件，还讨论了碳化硅器件的特性与设计要求
主要内容包括材料特性与输运物理、击穿电压等
1.4 Bipolar Power Devices 1.8 Summary 2.1.3 Built-in Potential 2.2 Resistivity 3.1.2 Multiplication Coefficient 3.2 Abrupt One-Dimensional Diode 3.6.1 Planar Junction Termination 3.6.3 Planar Junction with Multiple Floating Field Rings 3.6.6 Bevel Edge Terminations 3.7 Open-Base Transistor Breakdown 4.4.4 Silicon Carbide Rectifiers 4.8 Device Technology 4.11 Summary 5.1.4 Injection into the End Regions 5.2 Silicon Carbide P-i-N Rectifiers Problems References 6.2.1 The V-MOSFET Structure 6.2.3 The U-MOSFET Structure 6.5.1 MOS Interface Physics 6.6.5 JFET Resistance 6.6.8 Drain Contact Resistance 6.7.2 Impact of Breakdown Voltage 6.8.1 Source Contact Resistance 6.14.4 impact of VD-MOSFET and U-MOSFET Cell Pitch 6.15.1 Input Switching Power Loss 6.15.3 Gate Propagation Delay 6.16.1 Turn-On Transient 6.19.1 Threshold Voltage 6.19.3 Saturation Transeonductance 6.21 Silicon Power MOSFET Process Technology